Improved CMOS Device Performance through Silicon Epitaxial Intrinsic Gettering Techniques

John Ogawa; Borland Rama; S. Singh

doi:https://doi.org/10.7567/SSDM.1984.A-12-3

1984 International Conference on Solid State Devices and Materials

Aug 30, 1984 - Sep 1, 1984
International Conference Center Kobe, Kobe, Japan

[A-12-3] Improved CMOS Device Performance through Silicon Epitaxial Intrinsic Gettering Techniques

John Ogawa, Borland Rama, S. Singh (1.CVD Applications Laboratory Applied Materials, Inc., 2.Aerospace Electronics System Dept. General Electric Company)

https://doi.org/10.7567/SSDM.1984.A-12-3

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