Improved CMOS Device Performance through Silicon Epitaxial Intrinsic Gettering Techniques

John Ogawa; Borland Rama; S. Singh

doi:https://doi.org/10.7567/SSDM.1984.A-12-3

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜 1984年9月1日
International Conference Center Kobe, Kobe, Japan

[A-12-3] Improved CMOS Device Performance through Silicon Epitaxial Intrinsic Gettering Techniques

John Ogawa、Borland Rama、S. Singh (1.CVD Applications Laboratory Applied Materials, Inc.、2.Aerospace Electronics System Dept. General Electric Company)

https://doi.org/10.7567/SSDM.1984.A-12-3

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