[A-7-4] Mo Gate MOS Devices Stability Using High Purity Sputtering Target

T. Amazawa、H. Oikawa、N. Shiono N. Honma (1.Atsugi Electrical Communication Laboratory, NTT、2.Musashino Electrical Communication Laboratory, NTT)

https://doi.org/10.7567/SSDM.1984.A-7-4