Nearly-Dislocation-Free, Semi-Insulating GaAs Grown in B2O3 Encapsulant

Hideo Nakanishi; Hiroki Kohda; Kohji Yamada; Keigo Hoshikawa

doi:https://doi.org/10.7567/SSDM.1984.B-1-2

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜 1984年9月1日
International Conference Center Kobe, Kobe, Japan

[B-1-2] Nearly-Dislocation-Free, Semi-Insulating GaAs Grown in B2O3 Encapsulant

Hideo Nakanishi、Hiroki Kohda、Kohji Yamada、Keigo Hoshikawa (1.Atsugi Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation)

https://doi.org/10.7567/SSDM.1984.B-1-2

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