Monolithic Integration of InGaAsP/InP Laser Diode with Heterojunction Bipolar Transistors

Jun Shibata; Yoichi Sasai; Ichiro Nakao; Soichi Kimura; Nobuyasu Hase; Hiroyuki Serizawa

doi:https://doi.org/10.7567/SSDM.1984.C-2-2

1984 International Conference on Solid State Devices and Materials

Aug 30, 1984 - Sep 1, 1984
International Conference Center Kobe, Kobe, Japan

[C-2-2] Monolithic Integration of InGaAsP/InP Laser Diode with Heterojunction Bipolar Transistors

Jun Shibata, Yoichi Sasai, Ichiro Nakao, Soichi Kimura, Nobuyasu Hase, Hiroyuki Serizawa (1.Central Research Laboratory Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1984.C-2-2

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