Monolithic Integration of InGaAsP/InP Laser Diode with Heterojunction Bipolar Transistors

Jun Shibata; Yoichi Sasai; Ichiro Nakao; Soichi Kimura; Nobuyasu Hase; Hiroyuki Serizawa

doi:https://doi.org/10.7567/SSDM.1984.C-2-2

1984 International Conference on Solid State Devices and Materials

1984年8月30日〜 1984年9月1日
International Conference Center Kobe, Kobe, Japan

[C-2-2] Monolithic Integration of InGaAsP/InP Laser Diode with Heterojunction Bipolar Transistors

Jun Shibata、Yoichi Sasai、Ichiro Nakao、Soichi Kimura、Nobuyasu Hase、Hiroyuki Serizawa (1.Central Research Laboratory Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.1984.C-2-2

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