[C-6-3] Refractory WN Gate Self-Aligned GaAs MESFET Technology and Its Application to Gate Array IC's

Naotaka Uchitomi、Yoshiaki Kitaura、Takamaro Mizoguchi、Yasuo Ikawa Nobuyuki Toyoda、Akimichi Hojo (1.VLSI Research Center Toshiba Corporation)

https://doi.org/10.7567/SSDM.1984.C-6-3