[C-6-3] Refractory WN Gate Self-Aligned GaAs MESFET Technology and Its Application to Gate Array IC's

Naotaka Uchitomi, Yoshiaki Kitaura, Takamaro Mizoguchi, Yasuo Ikawa Nobuyuki Toyoda, Akimichi Hojo (1.VLSI Research Center Toshiba Corporation)

https://doi.org/10.7567/SSDM.1984.C-6-3