[D-3-2] Schottky Characteristics and Interfacial Defects in Tungsten Silicide/GaAs and Palladium/GaAs Systems

T. Makimoto, M. Taniguchi, K. Ogiwara, T. Ikoma, T. Okumura (1.Institute of Industrial Science, University of Tokyo, 2.Tokyo Metropolitan University)

https://doi.org/10.7567/SSDM.1984.D-3-2