[D-3-2] Schottky Characteristics and Interfacial Defects in Tungsten Silicide/GaAs and Palladium/GaAs Systems

T. Makimoto、M. Taniguchi、K. Ogiwara、T. Ikoma、T. Okumura (1.Institute of Industrial Science, University of Tokyo、2.Tokyo Metropolitan University)

https://doi.org/10.7567/SSDM.1984.D-3-2