[B-5-2] High Transconductance GaAs MESFETs Fabricated Using Sidewall-Assisted Self-Alignment Technology (SWAT)

K. Ueno、T. Furutsuka、M. Kanamori、A. Higashisaka (1.Microelectronics Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1985.B-5-2