[C-2-2] TDDB Measurements of SiO2 Gate and SiO2/Si3N4/SiO2 Gate Structure

J. Mitsuhashi、K. Sugimoto、M. Hirayama、S. Sadahiro、T. Matsukawa (1.LSI R&D Lab. Mitsubishi Electric Corporation)

https://doi.org/10.7567/SSDM.1985.C-2-2