[B-3-1] 1800V Non-Latch-Up Bipolar-Mode MOSFETs(IGBT) Fabricated by Silicon Wafer Direct Bonding

Akio Nakagawa、Yoshihiro Yamaguchi、Kiminori Watanabe Hiromichi Ohashi、Masaru Shimbo (1.Toshiba Research & Development Center)

https://doi.org/10.7567/SSDM.1986.B-3-1