[B-3-5] Inversion-type N-channel MOSFET Using Antiphase-domain Free Cubic-SiC Grown on Si(100)

K. Shibahara, T. Saito, S. Nishino, H. Matsunami (1.Department of Electrical Engineering, Kyoto University)

https://doi.org/10.7567/SSDM.1986.B-3-5