[B-6-2] Doping of Trench Capacitors for 4 Megabit DRAMs

H. Binder, H. Geiger, R. Kakoschke, H. M. Muhlhoff, S. Rohl (1.Siemens AG, Central Research and Development, Components Division)

https://doi.org/10.7567/SSDM.1986.B-6-2