Initial Stage of Molecular Beam Epitaxial Growth of GaAs on (100) Si

H. TAKASUGI; T. UEDA; M. KAWABE Y. BANDO

doi:https://doi.org/10.7567/SSDM.1986.C-1-2

1986 International Conference on Solid State Devices and Materials

Aug 20, 1986 - Aug 22, 1986
Tokyo Prince Hotel, Tokyo, Japan

[C-1-2] Initial Stage of Molecular Beam Epitaxial Growth of GaAs on (100) Si

H. TAKASUGI, T. UEDA, M. KAWABE Y. BANDO (1.Institute of Meterials Science, University of Tsukuba, 2.National Institute for Research in Inorganic Materials)

https://doi.org/10.7567/SSDM.1986.C-1-2

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