[C-1-2] Initial Stage of Molecular Beam Epitaxial Growth of GaAs on (100) Si
H. TAKASUGI, T. UEDA, M. KAWABE Y. BANDO
(1.Institute of Meterials Science, University of Tsukuba, 2.National Institute for Research in Inorganic Materials)
https://doi.org/10.7567/SSDM.1986.C-1-2