[C-5-2] GaAs Inversion-Base Bipolar Transistor (GaAs IBT): Future Transistor of Completely New Principle

Kazuhiko Matsumoto、Yutaka Hayashi、Nobuo Hashizume、Takafumi Yao、Toshiaki Kinosada (1.Electrotechnical Laboratory)

https://doi.org/10.7567/SSDM.1986.C-5-2