[C-5-2] GaAs Inversion-Base Bipolar Transistor (GaAs IBT): Future Transistor of Completely New Principle

Kazuhiko Matsumoto, Yutaka Hayashi, Nobuo Hashizume, Takafumi Yao, Toshiaki Kinosada (1.Electrotechnical Laboratory)

https://doi.org/10.7567/SSDM.1986.C-5-2