Novel Heterostructure Transistors with Extremely Small Separation between Gate and Channel

M. S. Shur; J. K. Abrokwah; R. R. Daniels; D. K. Arch; N. C. Cirillo, Jr

doi:https://doi.org/10.7567/SSDM.1986.C-6-1

[C-6-1] Novel Heterostructure Transistors with Extremely Small Separation between Gate and Channel

M. S. Shur、J. K. Abrokwah、R. R. Daniels、D. K. Arch、N. C. Cirillo, Jr (1.Department of Electrical Engineering, University of Minnesota、2.Physical Sciences Center, Honeywell inc.)

https://doi.org/10.7567/SSDM.1986.C-6-1

1986 International Conference on Solid State Devices and Materials

[C-6-1] Novel Heterostructure Transistors with Extremely Small Separation between Gate and Channel