[D-9-6] AlInAs/GaInAs HIFETs(Hetero-Interface FETs) grown by Normal pressure MOCVD Using Triethylmetals

M. Kamada, H. Ishikawa, M. Ikeda, Y. Mori, C. Kojima (1.Sony Corporation Research Center)

https://doi.org/10.7567/SSDM.1986.D-9-6