[A-2-3] Effects of Parasitic Resistance and Hot-Electron-Degraded Transconductance on Lower Submicron P and N-MOSFET Characteristics

I. Kamohara、T. Wada、H. Tango (1.VLSI Research Center,Toshiba Corp.)

https://doi.org/10.7567/SSDM.1987.A-2-3