Extremely Low Threshold Current Density in (111)-Oriented GaAs/AlGaAs Quantum Well Lasers

Toshiro HAYAKAWA; Masafumi KONDO; Takahiro SUYAMA; Kosei TAKAHASHI; Saburo YAMAMOTO; Toshiki HIJIKATA

doi:https://doi.org/10.7567/SSDM.1987.B-3-2

[B-3-2] Extremely Low Threshold Current Density in (111)-Oriented GaAs/AlGaAs Quantum Well Lasers

Toshiro HAYAKAWA, Masafumi KONDO, Takahiro SUYAMA, Kosei TAKAHASHI, Saburo YAMAMOTO, Toshiki HIJIKATA (1.Central Research Laboratories, Sharp Corporation)

https://doi.org/10.7567/SSDM.1987.B-3-2

1987 Conference on Solid State Devices and Materials

[B-3-2] Extremely Low Threshold Current Density in (111)-Oriented GaAs/AlGaAs Quantum Well Lasers