The Effect of Charge Build-up on Gate Oxide Breakdown during Dry Etching

Kazuyuki TSUNOKUNI; Kazuo NOJIRI; Sumi KUBOSHIMA; Kado HIROBE

doi:https://doi.org/10.7567/SSDM.1987.C-3-1

[C-3-1] The Effect of Charge Build-up on Gate Oxide Breakdown during Dry Etching

Kazuyuki TSUNOKUNI、Kazuo NOJIRI、Sumi KUBOSHIMA、Kado HIROBE (1.Musashi Works, Hitachi, Ltd.、2.Hitachi Microcomputer Engneering, Ltd.、3.Kanagawa Works , Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1987.C-3-1

1987 Conference on Solid State Devices and Materials

[C-3-1] The Effect of Charge Build-up on Gate Oxide Breakdown during Dry Etching