[C-4-6] Characteristics of Si Epitaxial Layers Grown by a New RF-Induction Heated Hot-Wall Type Reactor for High Volume, Low Cost Epitaxy

Yohsuke Inoue、Takaya Suzuki (1.Hitachi Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1987.C-4-6