[C-7-5] Formation of Arsenic-Implanted PN Junctions Using High Vacuum Ion Implanter

T. Ohmi、K. Masuda、T. Hashimoto、T. Shibata、M. Kato、Y. Ishihara (1.Department of electronics, Faculty of Engineering, Tohoku University)

https://doi.org/10.7567/SSDM.1987.C-7-5