[C-8-2] Doping of Trench Capacitor Cell with As SOG for 4 Megabit DRAM's
Y. Morita, K. Ishikawa, K. Yoneda, H. Oishi, S. Terakawa, M. Yoshida, M. Inoue
(1.Kyoto Research Laboratory Matsushita Electronics Corporation)
https://doi.org/10.7567/SSDM.1987.C-8-2