[C-8-2] Doping of Trench Capacitor Cell with As SOG for 4 Megabit DRAM's

Y. Morita、K. Ishikawa、K. Yoneda、H. Oishi、S. Terakawa、M. Yoshida、M. Inoue (1.Kyoto Research Laboratory Matsushita Electronics Corporation)

https://doi.org/10.7567/SSDM.1987.C-8-2