[C-8-2] Doping of Trench Capacitor Cell with As SOG for 4 Megabit DRAM's

Y. Morita, K. Ishikawa, K. Yoneda, H. Oishi, S. Terakawa, M. Yoshida, M. Inoue (1.Kyoto Research Laboratory Matsushita Electronics Corporation)

https://doi.org/10.7567/SSDM.1987.C-8-2