[S-I-8] Negative Differential Resistance Characteristics of an In0.53 Ga0.47 As/In1-x Alx As Pseudomorphic Resonant Tunneling Barrier Grown by MBE

Tsuguo INATA、Shunichi MUTO、Shigehiko SASA、Toshio FUJII、Satoshi HIYAMIZU (1.Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.1987.S-I-8