[B-9-2LN] Sharp Photoluminescence of the GaAs/AlGaAs SQWs Grown on Si Substrate by MEE at 300℃

M. Naganuma、W. Stolz、Y. Horikoshi (1.NTT Electrical Communications Loboratories)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-9-3LN] Fabrication of Narrow Two-Dimensional Electron Gas Channels in GaAs/AlGaAs Sidewall Interfaces by Selective Growth

Hiromitsu Asai、Syoji Yamada、Takashi Fukui (1.NTT Electrical Communications Laboratories)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-9-4LN] Power AlGaAs Hetero-MIS Gate InP Field Effect Transistors

K. Asano、T. Itoh、K. Kasahara、T. Ozawa、K. Ohata (1.Microelectronics Research Laboratories, NEC Corporation)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-10-1LN] Dual-Wavelength Twin-Stripe Laser Using Single Quantum Well Structure

Yasunori TOKUDA、Yuji ABE、Teruhito MATSUI、Noriaki TSUKADA、Takashi NAKAYAMA (1.Central Research Laboratory, Mitsubishi Electric Corporation)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-10-2LN] Tunable Wavelength Conversion Using a Multi-Electrode DFB LD with a Saturable Absorber

H. Kawaguchi、K. Oe、H. Yasaka、K. Magari、M. Fukuda、Y. Itaya (1.Electrical Communications Laboratories Nippon Telegraph and Telephone Corporation)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-10-3LN] Surface Emitting Bistable Multiquantum Well Lasers with a 45゜ Dry Etched-Mirror

Mitsunori Sugimoto、Noboru Hamao、Norikazu Takado、Masayasu Ueno、Hiroshi Iwata、Mamoru Uchida、Kentaro Onabe、Kiyoshi Asakawa、Tonao Yuasa (1.Opto-Electronics Research Laboratories NEC Corporation)

1987 Conference on Solid State Devices and Materials |PDF ダウンロード

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