The Japan Society of Applied Physics

[A-2-5] Drain Current Optimization for a Very High Voltage Fast Switch Device with Bipolar Mode FET Structure

P. G. Fallica、G. Ferla、A. Galluzzo、S. Musumeci、S. Bellone、G. Cocorullo (1.ST - Microelectronics、2.University of Naples、3.IRECE-CNR)

https://doi.org/10.7567/SSDM.1988.A-2-5