Very-Low-Temperature Epitaxial Silicon Growth by Low-Kinetic-Energy Particle Bombardment

Tadahiro Ohmi; Kiyohiko Matsudo; Tadashi Shibata Takeshi Ichikawa; Hiroshi Iwabuchi

doi:https://doi.org/10.7567/SSDM.1988.A-3-2

1988 International Conference on Solid State Devices and Materials

1988年8月24日〜 1988年8月26日
Keio Plaza Hotel, Tokyo, Japan

[A-3-2] Very-Low-Temperature Epitaxial Silicon Growth by Low-Kinetic-Energy Particle Bombardment

Tadahiro Ohmi、Kiyohiko Matsudo、Tadashi Shibata Takeshi Ichikawa、Hiroshi Iwabuchi (1.Department of Electronics, Faculty of Engineering Tohoku University)

https://doi.org/10.7567/SSDM.1988.A-3-2

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