Selective Growth of Polycrystalline Silicon by Laser-Induced Cryogenic CVD

Takeshi TANAKA; Koji DEGUCHI; Seiichi MIYAZAKI; Masataka HIROSE

doi:https://doi.org/10.7567/SSDM.1988.A-4-1

1988 International Conference on Solid State Devices and Materials

1988年8月24日〜 1988年8月26日
Keio Plaza Hotel, Tokyo, Japan

[A-4-1] Selective Growth of Polycrystalline Silicon by Laser-Induced Cryogenic CVD

Takeshi TANAKA、Koji DEGUCHI、Seiichi MIYAZAKI、Masataka HIROSE (1.Department of Electronics, Hiroshima Institute of Technology、2.Department of Electrical Engineering, Hiroshima University)

https://doi.org/10.7567/SSDM.1988.A-4-1

▲