[A-7-1] High-Dose and MeV-Energy Ion Implantation into Si for Buried-Layer Formation

Tadashi SUZUKI、Masao TAMURA、Kiyonori OHYU、Nobuyoshi NATSUAKI (1.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1988.A-7-1