Stabilization of GaAs Surface/Interface by Sulfur Treatment

H. Oigawa; J. Fan; Y. Nannichi; K. Ando; K. Saiki; A. Koma

doi:https://doi.org/10.7567/SSDM.1988.D-1-5

1988 International Conference on Solid State Devices and Materials

1988年8月24日〜 1988年8月26日
Keio Plaza Hotel, Tokyo, Japan

[D-1-5] Stabilization of GaAs Surface/Interface by Sulfur Treatment

H. Oigawa、J. Fan、Y. Nannichi、K. Ando、K. Saiki、A. Koma (1.Institute of Materials Science, University of Tsukuba、2.Department of Chemistry, University of Tokyo)

https://doi.org/10.7567/SSDM.1988.D-1-5

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