[D-1-6] Pronounced Improvement of the Interface Property of Fluoride/GaAs Structures by Post-Growth Annealing

Kwang Ho KIM、Hiroshi ISHIWARA、Tanemasa ASANO、Seijiro FURUKAWA (1.Graduate School of Science and Engineering, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1988.D-1-6