Growth Mechanism of SOI-GaAs Films on CaF2/Si Structures in the Electron-Beam Exposure and Epitaxy (EBE-Epitaxy) Technique

[D-2-5] Growth Mechanism of SOI-GaAs Films on CaF2/Si Structures in the Electron-Beam Exposure and Epitaxy (EBE-Epitaxy) Technique

Hee Chul LEE, Tanemasa ASANO, Hiroshi ISHIWARA, Seijiro FURUKAWA (1.Graduate School of Science and Engineering, Tokyo Institute of Technology)