Semiconductor Surface Studied by TEM: Si (001) 2x1 Reconstructed Surface and Heterogrowth of Ge

Kunio TAKAYANAGI; Tomonobu NAKAYAMA; Yasumasa TANISHIRO

doi:https://doi.org/10.7567/SSDM.1988.S-II-1

[S-II-1] Semiconductor Surface Studied by TEM: Si (001) 2x1 Reconstructed Surface and Heterogrowth of Ge

Kunio TAKAYANAGI、Tomonobu NAKAYAMA、Yasumasa TANISHIRO (1.Department of Materials Science and Engineering, Tokyo Institute of Technology、2.Department of Physics, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1988.S-II-1

1988 International Conference on Solid State Devices and Materials

[S-II-1] Semiconductor Surface Studied by TEM: Si (001) 2x1 Reconstructed Surface and Heterogrowth of Ge