Semiconductor Surface Studied by TEM: Si (001) 2x1 Reconstructed Surface and Heterogrowth of Ge

Kunio TAKAYANAGI; Tomonobu NAKAYAMA; Yasumasa TANISHIRO

doi:https://doi.org/10.7567/SSDM.1988.S-II-1

[S-II-1] Semiconductor Surface Studied by TEM: Si (001) 2x1 Reconstructed Surface and Heterogrowth of Ge

Kunio TAKAYANAGI, Tomonobu NAKAYAMA, Yasumasa TANISHIRO (1.Department of Materials Science and Engineering, Tokyo Institute of Technology, 2.Department of Physics, Tokyo Institute of Technology)

https://doi.org/10.7567/SSDM.1988.S-II-1

1988 International Conference on Solid State Devices and Materials

[S-II-1] Semiconductor Surface Studied by TEM: Si (001) 2x1 Reconstructed Surface and Heterogrowth of Ge