[S-IIIA-13] The Doped Quantum Well Gate FET Fabricated by Low-Pressure MOCVD

C. Y. Chang、W. Lin、W. C. Hsu、L. B. Di、F. Kai (1.Semiconductor and System Laboratories Institute of Electrical and Computer Engineering National Cheng Kung University、2.Institute of Electronics National Chiao Tung University)

https://doi.org/10.7567/SSDM.1988.S-IIIA-13