[S-IIIA-9] Comparison of Effects of Ionizing Radiation and High-Current Stress on Characteristics of Self-Aligned Bipolar Transistors

T. C. Chen, J. P. Norum, T. H. Ning (1.IBM Research Division, Thomas J. Watson Research Center)

https://doi.org/10.7567/SSDM.1988.S-IIIA-9