Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing

Min-Lin CHENG; Armin KOHLHASE; Taketoshi SATO; Shin-ichi KOBAYASHI; Junichi MUROTA; Nobuo MIKOSHIBA

doi:https://doi.org/10.7567/SSDM.1989.A-2-3

[A-2-3] Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing

Min-Lin CHENG、Armin KOHLHASE、Taketoshi SATO、Shin-ichi KOBAYASHI、Junichi MUROTA、Nobuo MIKOSHIBA (1.Research Institute of Electrical Communication, Tohoku University)

https://doi.org/10.7567/SSDM.1989.A-2-3

1989 Conference on Solid State Devices and Materials

[A-2-3] Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing