[A-3-1] Effect of Atomic-Order Substrate Surface Planarization and O2 Partial Pressure Control during Growth on Crystalline Quality of Si/SrxBa1-xO/Si(111) Structure

Yuichi Kado、Yoshinobu Arita (1.NTT LSI Laboratories)

https://doi.org/10.7567/SSDM.1989.A-3-1