[A-5-3] Fabrication of Si/CoSi2/Si Permeable Base Transistor Using Self-Aligned and Two Step Molecular Beam Epitaxy

N. Nakamura、T. Ohshima、K. Nakagawa、M. Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1989.A-5-3