[A-6-2] An 8 nm-thick Polysilicon MOS Transistor and Its Thin Film Effects

T. Hashimoto, T. Kobayashi, T. Mine, T. Yamanaka, N. Hashimoto, A. Shimizu, T. Nishida, Y. Kawamoto (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi VLSI Engineering Corp.)

https://doi.org/10.7567/SSDM.1989.A-6-2