[A-6-2] An 8 nm-thick Polysilicon MOS Transistor and Its Thin Film Effects

T. Hashimoto、T. Kobayashi、T. Mine、T. Yamanaka、N. Hashimoto、A. Shimizu、T. Nishida、Y. Kawamoto (1.Central Research Laboratory, Hitachi Ltd.、2.Hitachi VLSI Engineering Corp.)

https://doi.org/10.7567/SSDM.1989.A-6-2