[A-6-4] Multilayered Well Formation for Sub-0.5 μm CMOS Devices Utilizing High Energy Ion Implantation

Kiyonori OHYU、Hidekazu GOTHO、Tadashi SUZUKI、Nobuyoshi NATSUAKI (1.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1989.A-6-4