Limit on Triode Region Drivability for a 0.1μm MOSFET, Predicted by Process/Device Simulation Including Parasitic Resistance

[A-7-3] Limit on Triode Region Drivability for a 0.1μm MOSFET, Predicted by Process/Device Simulation Including Parasitic Resistance

Itaru Kamohara, Shinichi Takagi, Tetsunori Wada, Kenji Natori (1.ULSI Research Center, Toshiba Corporation)