[A-7-3] Limit on Triode Region Drivability for a 0.1μm MOSFET, Predicted by Process/Device Simulation Including Parasitic Resistance

Itaru Kamohara、Shinichi Takagi、Tetsunori Wada、Kenji Natori (1.ULSI Research Center, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1989.A-7-3